SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To solve a problem that a transistor using an oxide semiconductor is inferior to a transistor using an amorphous silicon in reliability thereby to manufacture a semiconductor device having a transistor using an oxide semiconductor having high reliability.SOLUTION: In a semiconductor device manufacturing method, an oxide semiconductor film is deposited by a spattering method by using a spattering target composed of an oxide semiconductor which is made by mixture of materials so as to achieve a composition ratio capable of obtaining a crystalline structure and which has a crystalline region where a c-axis is parallel with a normal vector of an upper surface.SELECTED DRAWING: Figure 1