| 摘要 |
PURPOSE:To manufacture a thin-film field effect transistor (TFT) which is small in parasitic capacity and resistance, by making a semiconductor layer, which is doped with impurities so as to be in contact with a semiconductor thin-film, be interposed between a gate insulating film and the semiconductor thin-film, and except on the channel part, in a self-matching state against the gate electrode. CONSTITUTION:Only the part of a photo-sensitive resinous film which is formed on a semiconductor layer doped with impurities, just above a gate electrode, is removed by means of optical exposure from the rear of the gate electrode. The semiconductor layer doped with impurities, with the photosensitive resinous film serving as a mask, is etched and formed in a self-matching state against the gate electrode. By forming this semiconductor layer doped with impurities, that is, by forming a source . drain electrode in the self-matching state against the gate electrode, an overlapping part of the gate electrode and the source .drain one becomes almost lost, and therefore a TFT small in parasitic capacity can be manufactured. |
