发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To obtain the titled composition having improved sensitivity, dimensional accuracy and resist pattern shape by incorporating a cresol-novolak resin which is composed of a mixed cresol of m-cresol and p-cresol and has a specific range of a peak area ratio of <13>C-NMR spectral to the titled composition. CONSTITUTION:The titled composition contains a photosensitizer comprising the cresol-novolak resin and naphthoquinone diazide sulfonate as a main component. The cresol-novolak resin is exemplified by a resin which is composed of the mixed cresol of m-cresol and p-cresol and has 0.50-0.90 of the M value shown by the formula derived from <13>C-NMR spectral, M=B/(A+B+C) (wherein A is the peak area of 112.0-114.5ppm, B is the peak area of 114.5-116.5ppm and C is the peak area of 116.5-119.0ppm). Thus, the fine resist pattern having less tendency for generating scattering of quality, high sensitivity, high dimensional accuracy and good resist pattern shape is obtd.
申请公布号 JPS6327836(A) 申请公布日期 1988.02.05
申请号 JP19860171373 申请日期 1986.07.21
申请人 TOKYO OHKA KOGYO CO LTD 发明人 ASAUMI SHINGO;OBARA HIDEKATSU;TANAKA HATSUYUKI;NAKAYAMA TOSHIMASA
分类号 G03F7/022;G03C1/72;G03F7/004;G03F7/023 主分类号 G03F7/022
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