| 摘要 |
PURPOSE:To implant carriers into a channel layer with higher concentration by providing super-lattice structure films which are laminated along the direction approximately vertical to the longitudinal direction of a gate electrode between the gate electrode and the channel layer of a field effect transistor. CONSTITUTION:A drain electrode 7 is provide on a left-hand part of a substrate 9 and an amorphous silicon hydride (a-Si:H, wherein (a) means 'amorphous' including microcrystals in a broad sense) layer 8 is provided on the drain electrode 7 and the substrate 9. An amorphous silicon oxide (a-SiO) film (insulating film) 11 is provided on the substrate 9 on the right-hand side and an amorphous silicon cabohydride (a-Si1-xCx:H) layer 10 (channel layer), a super-lattice structure 12 composed of laminated a-Si:H layers (well layers) 6 and N<+>type a-Si1-xCx:H layers (barrier layers) 5 and an a-Si1-xCx:H layer 3 and a gate electrode 4 are provided on the a-SiO film 11 on the left-hand side, on the center part and on the right-hand side respectively. By employing the super-lattice structure films between the gate electrode and the channel layer, two-dimensional electrons can be created and a channel confinement effect can be produced so that quantized electrons can be implanted into the channel layer. |
