| 摘要 |
PURPOSE:To enhance sensitivity to near and far ultraviolet rays and resolution as well as dry etching resistance by using a polymer having specified sulfonate esters for a photoresist. CONSTITUTION:The photoresist material is made of the polymer having 0-nitrated benzyl sulfonate groups represented by the formula shown on the right in which each of R1 and R2 is H or lower alkyl, and it has a molecular weight of, preferably, several thousands - several millions, if lower than this range, it deteriorates in mechanical strength of the formed film and if higher than it, t he solution of the photoresist material becomes too high in viscosity, resulting in becoming hard to control the film thickness and difficult to handle, thus permitting the sulfonic acid formed by exposure to near or far ultraviolet rays to be made quite different in solubility from the nonexposed parts and to be developed by an aqueous solvents, and consequently, the obtained pattern to be enhanced in resolution. |
