| 摘要 |
PURPOSE:To increase a Hall output voltage by deeply implanting silicon ions to an N-type active region. CONSTITUTION:A Hall element 1 is formed of a semi-insulating substrate 2, an N-type active region 3 formed in the substrate 2, and an N<+> type contact region formed at the end of the region 3. The substrate 2 is covered with a non-doped silicon oxide film approx. 5000Angstrom , and the contact region is formed by implanting silicon ions under the conditions of 150keV of implanting energy and 1 X 10<13>cm<-2> of doping amount through a hole corresponding to the ion implanted region. The region 3 is similarly formed by implanting silicon ions under the conditions of 360keV of implanting energy and 4.2 X 10<12>cm<-2>. A first electrode 7 is formed through the contact hole 6 of a contact region 4. A second electrode 10 is formed through a contact hole 9, and a ferrite of a ferromagnetic material to be bonded to the lower surface of the substrate 2 is eventually provided. |
