发明名称 Programmable logic array and gates therefor.
摘要 <p>An AND gate (40) includes first and second input leads (42,43) and an output lead (44). The AND gate (40) includes a first N channel MOS ("NMOS") transistor (58) which couples the output lead (44) to ground in response to the signal (IN1) on the first input lead (42) and a second NMOS transistor (60) which couples the output lead (44) to ground in response to the signal (IN2) on the second input lead (43). A buffer (76) having a high output impedance is coupled to the output lead (44) and tends to maintain the output lead (44) in a constant state. When the signal on the first input lead (42) goes high, the first NMOS transistor (58) turns off and a PMOS transistor (64) turns on, thereby coupling the output lead (44) to a high voltage source (VH) for a predetermined time period. If the second NMOS transistor (60) is off, the resulting pulse causes the AND gate output signal (Vout) to go high. The high impedance buffer (76) maintains the output lead (44) in the high state.</p>
申请公布号 EP0254786(A1) 申请公布日期 1988.02.03
申请号 EP19860308496 申请日期 1986.10.31
申请人 MONOLITHIC MEMORIES, INC. 发明人 MOSS, WILLIAM E.
分类号 H03K5/007;H03K5/151;H03K19/00;H03K19/017;H03K19/177 主分类号 H03K5/007
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