发明名称 EXCITABLE PIEZOELECTRIC EPITAXIAL STRUCTURE AND ELECTRONIC DEVICE FOR THE GENERATION OF SURFACE ACOUSTIC WAVES THEREIN
摘要 <p>An epitaxial structure in which a constraint imposed by forced epitaxy causes an increase in the piezoelectric effect of a group of layers. The structure which provides this effect utilizes a semi-insulating substrate made from a first material on which is deposited by forced epitaxy a layer of a second material, the two materials are in crystalline mesh parameter disharmony, which creates in said layer a constraint increasing its piezoelectricity. On the constrained layer are deposited two groups of alternated "deforming" and "deformed" layers of the two materials. The thickness of the structure is sufficient to allow propagation of the surface waves. The advantage of this structure is that it allows two transducers such as transistors to be integrated on or at the side of this structure.</p>
申请公布号 EP0116800(B1) 申请公布日期 1988.02.03
申请号 EP19830402526 申请日期 1983.12.23
申请人 THOMSON-CSF 发明人 NYEN TRONG, LINH;CHEVRIER, JEAN
分类号 H01L21/20;H01L27/20;H01L41/00;H01L41/18;H03H9/02;H03H9/05;(IPC1-7):G10K11/36 主分类号 H01L21/20
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