| 摘要 |
PURPOSE:To reduce interconnection resistance, to prevent wire breakdown and to reduce smearing, by reducing the thickness of a flattened film on an image sensing region thinner than the thickness of a flattened film on a peripheral circuit region. CONSTITUTION:On a peripheral circuit region 2b, a second interconnection layer 6b is formed by way of a first interconnection layer 4b and a flattened film 5b on the first interconnection layer 4b. On an image sensing region 2a, a light-screening layer 6e is selectively formed by way of a first interconnection layer 4a and a flattened film, which is thinner than the flattened film 5b on the peripheral circuit region 2b. For example, the polysilicon layer 4a, which is the first interconnection layer, is formed on the image sensiting region 2a through an insulating film 3. The Al layer 6a, which is the light-screening layer, is formed on the polysilicon layer 4a through an insulating film 3a. Meanwhile, the polysilicon layer 4b, which is the first interconnection layer, is formed on the peripheral circuit region 2b through the insulating film 3. The Al layer 6b, which is the second interconnection layer, is formed on the polysilicon layer 4b through an insulating film 3b and the flattened film 5b. |
