| 摘要 |
PURPOSE:To use a semiconductor substrate as the electrode leadout region of transistor, secure a high withstand voltage of a high output transistor and facilitate manufacture by providing other conductivity type separation region so that it reaches an insulator thin film layer from the surface of semiconductor epitaxial layer. CONSTITUTION:A metal thin film 10 which works as a mask is selectively formed at the surface of a low resistance N type semiconductor substrate 1 and an insulator layer 9 is formed at the deeper position 12 from the surface by the ion beam 11. Ion is implanted selectively to this layer 9 from the surface, impurity is doped in order to form the N type high impurity concentration regions 31, 32 and the N type impurity region 13 is formed. Thereafter, the N type epitaxial layer 4 is formed at the surface, an insulating separation diffusion layer 5 is formed on the surface of epitaxial layer 4 and then the base, emitter are formed by the ordinary processes. The first buried layer is no longer necessary, the layer 9 is used for the P type epitaxial layer and thereby manufacture of high output transistor can be facilitated. |
