| 摘要 |
<p>A Bloch line memory device in which a stripe magnetic domain (1) is formed within a magnetic film for holding magnetic bubble domains, and Bloch line pairs (4a,4b; 5a, 5b) are stored as information carriers within a magnetic wall defining the magnetic domain. In order to write Bloch lines into the magnetic wall of the stripe magnetic domain, current (Ig) is caused to flow through a single conductor (14) which is so disposed as to cross the mgnetic wall of the stripe magnetic domain. On this occasion, the current through the single conductor (14) is so directed as to generate an in-plane field opposite in sense to magnetization within the magnetic wall of the stripe magnetic domain (1).</p> |
