发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To prevent an erroneous action in which noise from a writing bit line is assumed as a cause by laying in extending a ground line which decrease the capacity between a writing bit line and a reading bit line between a writing bit line and a reading bit line. CONSTITUTION:An aluminum wiring 8 connected to a ground (earth) is laid in extending in a Y direction, this is constituted as a ground line GND, and this is laid in extending in parallel to respective writing reading bit lines BW and BR and between both these bit lines BW and BR. The ground line GND is connected to a diffusion area 2a in a contact 10. Thus, since the ground line GND is functioned as the shield to interrupt electrically both bit lines BW and BR, the capacity between both bit lines BW and RR is cancelled, and even by the change in a writing bit line BW, the noise will not occur at the reading bit line BR.
申请公布号 JPS6325881(A) 申请公布日期 1988.02.03
申请号 JP19860166686 申请日期 1986.07.17
申请人 NEC IC MICROCOMPUT SYST LTD 发明人 HONDA HIDETOSHI
分类号 G11C11/405;G11C11/34 主分类号 G11C11/405
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