| 摘要 |
PURPOSE:To make it possible to improve the integration density and the electric reliability of an EEPROM, by forming the floating electrode and the control gate electrode of a field effect transistor for information memory and the gate electrode and the word line of a switching field effect transistor by overlapping and cutting. CONSTITUTION:A floating gate electrode 6A and a control gate electrode 8A provided thereon in a field effect transistor Qm for information memory are formed by overlapping and cutting. A word line 8B, which is formed with the same conductor layer for the control gate electrode 8A, is formed on a gate electrode 6B of a switching field effect transistor Qs. The gate electrode 6B of the switching field effect transistor Qs is formed with the same conductor layer for said floating gate electrode 6A by overlapping with said word line 8B and by cutting both parts. Thus the size of mask aligning allowance in manufacturing processes is reduced. The integration density is improved. The etching conditions are made approximately uniform. Deterioration in dielectric strength of the gate insulating film and the like are reduced, and the electric reliability can be improved. |
