| 摘要 |
PURPOSE:To improve the working efficiency by depositing gallium arsenide by means of the molecular beam epitaxy process, and further vapor-depositing cesium to form a photoelectric surface on the predetermined substrate surface, thereby eliminating the heating process. CONSTITUTION:When a metal film pattern 12 is formed on the surface of a GaAs substrate 11, a patterned substrate 13 is provided to which a polluted layer 14 has adhered at the formation of the pattern 12. When GaAs is deposited on the surface of this substrate 13 by means of the molecular beam epitaxy, the layer 14 is buried under a GaAs layer 17. Then, when a Cs thin film 15 is formed by means of a vapor depostion process, a photoelectric surface 16 is formed without a heating process for removing the layer 14, thereby improving the working efficiency. |
