| 摘要 |
PURPOSE:To reduce the dispersion of output due to any leakage current between common electrode and leading interconnections of individual electrode by a method wherein an insulating film is formed between a photoelectric conversion film and the leading interconnections. CONSTITUTION:After forming common electrode 2 on a glass substrate 1, an ALPHA-Si photoelectric conversion film 3 is deposited. Next, after forming an individual electrode, a lighting window is made. Furthermore, an interlayer insulating film 9 is patterned to form interconnections 5 in contact with the individual electrode 4 at the ends on the film 9. In such a constitution, any leakage current in the film 3 held by the interconnections 5 from the electrodes 2 and 4 can be prevented from occuring so that V-I characteristics may not be degraded into yielding point to produce a close contact type image senser with excellent resolving power and no dispersion of output. |
