SEMICONDUCTOR DEVICE HAVING COMBINED BIPOLAR TRANSISTOR AND MOSFET

摘要

: A semiconductor device has a complicated bipolar transistor and a MOSFET structure. In the equivalent circuit of this device, the MOSFET is connected between the base and emitter of the bipolar transistor. The bipolar transistor is a vertical type transistor, and the MOSFET is a lateral type transistor. The MOSFET is formed on a base surface on a side of one main surface on which the emitter of the bipolar transistor is exposed, in such a manner that the MOSFET substantially surrounds the emitter. The result is a device that has a high voltage resistance, a low ON-resistance and high-speed switching characteristics.