发明名称 MANUFACTURE OF THIN FILM OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To eliminate a polishing sag by a method wherein a chip is fixed on a polishing substrate at the element forming surface, polishing dummy chips having the same thickness as that of the chip are fixed on the periphery of the chip and the chip is polished from its rear surface. CONSTITUTION:The element formation finished surfaces of chips 12 are equally fixed on a glass plate 11 of a polishing device with a wax 14. Polishing dummy chips 13 of the prescribed thickness are tightly fixed on the periphery of the chip. A total polishing is performed from the rear surface of the chip to the desired thickness and finally, the polished surface of the chip 12 is mirror- finished. According to this constitution, the chip is uniformly polished without producing any polishing sag on the periphery of the chip 12 located at the central part. According to this constitution, the chip can be made thinner uniformly, there is no effect to the element forming surface even through a sag is generated and the reliability is upgraded.
申请公布号 JPS6324680(A) 申请公布日期 1988.02.02
申请号 JP19860166642 申请日期 1986.07.17
申请人 TOSHIBA CORP 发明人 INOUE SHOICHI;KIKUCHI MITSUE;OSAWA SHIGERU
分类号 H01L31/10;H01L21/304 主分类号 H01L31/10
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