发明名称 WELDING ELECTRODE STRUCTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent a semiconductor chip from cracking by inserting a heat interrupter and a stress moderating insert material to a weld corresponding part between the chip and an electrode pattern. CONSTITUTION:An inserting film 7 is inserted to the weld corresponding part between a semiconductor chip 1 and an electrode pattern. The film 7 is formed of a material having low thermal conductivity as compared with the electrode pattern 2 such as Al, Ag, Ag-Pd, Cu, An and high strength, such as ceramic such as nonmetal material or metal material such as Fe, W, Mo. The transfer of combustion heat to the chip 1 due to welding can be interrupted by the film 7 to improve the temperature distribution (c), and the applied pressure (b) can be also dispersed by the film 7. Accordingly, the stress of the chip 1 directly under the welded part 5 can be largely suppressed, thereby preventing the chip 1 from cracking.
申请公布号 JPS59211255(A) 申请公布日期 1984.11.30
申请号 JP19830086841 申请日期 1983.05.16
申请人 MITSUBISHI DENKI KK 发明人 MACHIDA KAZUMICHI
分类号 H01L21/60 主分类号 H01L21/60
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