发明名称 FET CIRCUITS
摘要 <p>A FET circuit comprising a pair of inverters, each of which comprises an input-stage FET having its gate electrode connected to receive output signals from the FET of the other inverter. The source electrodes of the input-stage FETs are connected to a common-connection point, and current source means are connected between such common-connection point and a power supply terminal. The circuit has an extended allowable range of threshold voltages for the MESFET devices and is effective for stable operation without increased power consumption.</p>
申请公布号 CA1232336(A) 申请公布日期 1988.02.02
申请号 CA19830419790 申请日期 1983.01.19
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KATSU, SHIN-ICHI;NAMBU, SHUTARO;SHIMANO, AKIO
分类号 H03K3/356;(IPC1-7):H03K3/356 主分类号 H03K3/356
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