发明名称 |
FET CIRCUITS |
摘要 |
<p>A FET circuit comprising a pair of inverters, each of which comprises an input-stage FET having its gate electrode connected to receive output signals from the FET of the other inverter. The source electrodes of the input-stage FETs are connected to a common-connection point, and current source means are connected between such common-connection point and a power supply terminal. The circuit has an extended allowable range of threshold voltages for the MESFET devices and is effective for stable operation without increased power consumption.</p> |
申请公布号 |
CA1232336(A) |
申请公布日期 |
1988.02.02 |
申请号 |
CA19830419790 |
申请日期 |
1983.01.19 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KATSU, SHIN-ICHI;NAMBU, SHUTARO;SHIMANO, AKIO |
分类号 |
H03K3/356;(IPC1-7):H03K3/356 |
主分类号 |
H03K3/356 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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