FORMATION OF POSITIVE PATTERN IN PHOTORESIST LAYER

摘要

The process involves the following stages: (a) covering a substrate with a layer of photosensitive resin consisting of a polymer carrying functional groups (preferably phenolic) mixed with or bound to a photosensitive crosslinking agent such as a bis-arylazide; (b) exposure of the layer to visible or ultraviolet light through a mask; (c) treatment of the layer by a silicon compound (e.g. hexamethyldisilazane) and (d) dry development by plasma engraving (e.g. an oxygen plasma) to remove the irradiated parts of the layer. The silicon compound diffuses selectively into the non-irradiated parts of the layer and is fixed in these parts: through the dry engraving, a mask of silicon oxide is formed which protects the parts not irradiated during this operation. Application to the production of integrated circuits.