| 摘要 |
PURPOSE:To form a flat and thin film having no irregular surface on the surface of a substrate by forming a substrate upper frame, filling solution in which an insulator forming material is dissolved in volatile solvent, and solidifying the material by volatilizing the solvent. CONSTITUTION:An SiO2 film 9, a transistor forming region 10 are formed on a P type silicon substrate 8, and a gate oxidized film 11, a gate electrode 12 and the first layer wirings 13 are formed. A PSG film is accumulated, and etched, thereby forming a frame 16 made of PSG. Normal methylpyrrolidone is used as the solvent to dissolve polymer polyacidic acid in a solution. The solution is filled in a space 17 surrounded by the frame 16, a baking is executed, solute polyacidic acid is dehydrated to form a polymer polyimide film 18. The frame 16 is removed, an aluminun film 19 is deposited to form the second layer wirings 20. The film 18 has approx. 3/4 of volumetric change rate, and the step 21 is reduced to approx. 1/4 like the step 20, thereby completely removing the disconnection at the step of the wirings 20. |
