| 摘要 |
PURPOSE:To obtain a side wall form in an excellent reproducible manner by a method wherein a gate electrode is ion-implanted into a mask, and after a CVD film containing impurities has been deposited thereon, the side wall is formed on the edge part of the gate electrode by performing anisotropic etching. CONSTITUTION:A field oxide film 12, with which between each of MISFETs is separated, is formed on a silicon substrate 11, a gate insulating film 13 is grown by performing a thermally oxidizing method, and a polycrystalline silicon 14, which will be turned into a gate electrode, is deposited thereon. Subsequently, the polycrystalline silicon 14 is patterned. At this time, the gate oxide film on the etched part of the polycrystalline silicon 14 is left. Then, a low density N-type layer 15 is formed by ion-implanting phosphorus using the gate electrode as a mask, and an oxide film 16 is deposited on the whole surface. At that time, the oxide film is brought into an overhung form at the edge part. Then, a high density N-type layer 17 is formed by performing anisotropic plasma etching leaving the side wall 16' on the side of the gate electrode using the gate electrode and the side wall 16' as a mask.
|
