| 摘要 |
PURPOSE:To obtain easily a completely close contact type image sensor with high resolution whose degree of alignment accuracy is relieved, by forming a photosensitive layer having a light transmitting window on the upper side of a transparent substrate, forming a transparent insulating layer in the light transmitting window so as to be arranged at the same surface position as the surface of the photosensitive layer, and forming an individual transparent electrode on the photosensitive layer and the transparent insulating layer. CONSTITUTION:A light transmitting window is formed in a specified region of a chrome thin film to obtain a common electrode 17 which serves as a light shielding film too and has a light transmitting window 21 in a part. So as to expose a region corresponding to the light transmitting window 21 and cover a region forming a photosensitive layer, a resist pattern 33 is formed, which is used as a mask to form an island-shaped photosensitive layer 15 by removing the exposed part of an a-Si:H layer. Then a transparent insulating film 35 is formed in the manner in which the surface of a part formed in the region of the light transmitting Window 21 is arranged at the same surface position as the surface of the photosensitive layer 15. The resist layer is dissolved, the transparent insulating film on the resist layer is eliminated, and a transparent insulating layer 31 is formed in the light transmitting window 21 of the photosensitive layer 15. On a glass substrate 11 containing an individual electrode 19, an insulating film which transmits light and serves as a protection film, too. |
