| 摘要 |
PURPOSE:To form a GaAs IC having a resistance element including a desired resistance value with good reproducibility by sorting a substrate having a resistance element of a smaller resistance value than the desired resistance value, selectively ion implanting to the element, and then annealing it at a specific temperature. CONSTITUTION:After a resistance element of an active layer 2 is formed, since the element is selectively ion implanted to a substrate 1 having the element of smaller resistance value than a desired resistance value, a lattice defect occurs in a resistance element region. Further, after ion implanting, it is annealed at 300-400 deg.C to eliminate a point defect existing sufficiently separately in a crystal. Thus, the element having a desired resistance value can be obtained with good reproducibility, and remarkable deterioration does not occur in the characteristics of an IC. |
