| 摘要 |
PURPOSE:To improve the breakage life of a creep due to the load of a tensile stress generated in a temperature cycle by using a copper alloy for suppressing a recrystallization as a bonding wire of a semiconductor element. CONSTITUTION:A wire material which contains 20-560ppm (hereinafter wt ppm is used) of one or more elements selected from Zr, Hf, Ti, Cr and Mn and 25-250ppm or one or more elements selected from Sb, P, Li, Sn, Pb and Cd or 10-650ppm of one or more elements selected from As, Zn, K, Sr, Mg, Ca and T, and the residue of Cu is used as a wire bonding material in a semiconductor device which uses a wire bonding as the connection of a semiconductor chip. Thus, the semiconductor device which uses a copper wire having a strong creep strength and an excellent bondability with high reliability is obtained. |
