| 摘要 |
PURPOSE:To reduce the occupying area of a semiconductor device thereby to improve the integration thereof by superposing a semiconductor layer of digit line, an electrode layer of a word line and an electrode layer for storing charge to form a stereoscopic circuit. CONSTITUTION:The bottom of a groove of a rectangular sectional shape formed on a semiconductor substrate 101 is opposed to a semiconductor layer 106 of a digital line separately from a gate insulating film 105, an electrode layer 104 of a U-shaped word line is disposed along the periphery in a groove, and the periphery of the outside is opposed to the substrate 101 separately from a gate insulating layer 105 at the right and left sides of the groove. The inside of the layer 104 of the word line is opposed to an electrode 107 for storing charge separately from a first dielectric unit 102, the electrode layer 107 is ohmically connected to the substrate 101 through a semiconductor layer 109, and the uppermost end is opposed to an electrode wiring layer 103 separately from a second dielectric film 108. Thus, a memory cell reduces an area occupying on the substrate 101. |
