| 摘要 |
A memory is provided which includes a semiconductor substrate (26) having a major surface and a trench (24) disposed therein having a longitudinal axis, storage means (16, 16') disposed on a given sidewall of the trench, switching means (12, 12') having a control element and a current carrying element disposed on the given sidewall of the trench between the storage means and the major surface of the substrate and coupled to the storage means, a first electrically conductive line (40, 40') disposed on the given sidewall in contact with the control element of the switching means and having a longitudinal axis arranged parallel to the longitudinal axis of the trench, and a second electrically conductive line (22, 22') disposed on the major surface of the semiconductor substrate in contact with the current carrying electrode of the switching means and having a longitudinal axis arranged orthogonal to the longitudinal axis of the trench. |
