| 摘要 |
PURPOSE:To get rid of the deterioration of the efficiency of photoelectric conversion in a long-wave length range, and to enable the high efficiency of photoelectric conversion in a wide wavelength range by forming a CdTe thin-film having p-n junction structure between an electrode and an a-Si:H thin-film layer having p-i-n junction structure. CONSTITUTION:An n-type CdTe layer 2 and a p-type CdTe layer 3 are deposited on a metallic substrate 1 consisting of stainless as an electrode in total thickness of 0.6mum or more, thus shaping a CdTe thin-film layer 8 having p-n junction structure. An n-type a-Si:H layer 4 in thickness of 0.3-0.9mum, an i-type a-Si : H layer 5 and a p-type a-Si:H layer 6 are evaporated onto the CdTe thin-film layer 8, thus forming an s-Si : R thin-film layer 9. A transparent conductive film layer (TCO) 7 is shaped onto the a-Si:H thin-film layer 9, thus constituting a photoelectric conversion cell. Accordingly, a photoelectric conversion cell, the efficiency of photoelectric conversion of which in a long-wave length range is not deteriorated and which has spectral sensitivity characteristics excellently coinciding with the spectral distribution of solar rays in a wide wavelength range, can be acquired. |
