发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To have a favorable creep strength and exhibit an excellent property of bonding as well, resulting in an improvement of reliability. CONSTITUTION:Wire materials consisting of the following components are used as raw materials for a wire bonding treatment: (1) a component containing 20-360 ppm of a sort or more than two sorts of elements selected from In, B, Bi, Ce, and Si. (2) a component containing 10-650 ppm of a sort or more than two sorts of elements selected from As, Zn, K, Mg, Ca, and T1. (3) a component containing 25-250 ppm of a sort or more than two sorts of elements selected from Sb, P, Li, Sn, Pb, and Cd. (4) The other component consisting of Cu. Thus, copper alloy having a property to suppress recsystallizetion is so effectively used as a, bonding wire 4 of semiconductor element that the lifetime of creep for breakage due to a load of tensile stress to be developed by temperature cycles can be exceedingly improved.
申请公布号 JPS6320844(A) 申请公布日期 1988.01.28
申请号 JP19860164657 申请日期 1986.07.15
申请人 TOSHIBA CORP 发明人 SATO MICHIO;SUZUKI ISAO;YAMAMORI KAZUHIRO
分类号 H01L21/60 主分类号 H01L21/60
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