| 摘要 |
<p>PURPOSE:To obtain the titled device of high reliability wherein the generation of cracks and pin holes of said device is eliminated by polishing the back surface side after forming an impurity layer and a surface electrode with a patterned insulation layer on the main surface side as a mask. CONSTITUTION:The insulation layers 21 are formed on the front and back surfaces of a semiconductor substrate 20. Next, the P<+> type impurity layer 22 is formed by patterning said layer 21 on an N layer 21b, and an insulation layer 23 is formed on the surface of said layer 22. Then, after opening the contact window 24 of said layer 22, the surface electrode 25 contacting said layer 22 is formed on the surface of said substrate 20. The back surface side of the substrate 20 is polished to a fixed thickness, next an alloy layer 26 containing e.g. AuGe as the main constituent is formed on the back surface of a polished N<+> layer 20a, and an Ag layer 27 is formed thereon, thus obtaning a back surface electrode 28. Thereafter, an Ag bump is formed on the surface electrode 25, resulting in obtaining the semiconductor device 30.</p> |
