发明名称 Low-noise single-stage transistor preamplifier
摘要 In this preamplifier, it is proposed to connect bipolar transistors of in each case the opposite type of conduction (pnp and, respectively, npn) to one another with their collectors and to connect their emitters in each case via emitter resistors to earth or the supply voltage, the two emitters also being decoupled via capacitors in series with further low-resistance emitter resistors to earth in order to achieve a high alternating-voltage gain with low distortion.
申请公布号 DE3624763(A1) 申请公布日期 1988.01.28
申请号 DE19863624763 申请日期 1986.07.22
申请人 EUGEN BEYER,ELEKTROTECHNISCHE FABRIK GMBH & CO 发明人 BESSLING,BERT
分类号 H03F1/32;H03F3/18;H03F3/30;(IPC1-7):H03F1/26;H03F3/183;H03F3/26 主分类号 H03F1/32
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