| 发明名称 |
FABRICATION OF INP CONTAINING SEMICONDUCTOR DEVICES HAVING HIGH AND LOW RESISTIVITY REGIONS |
| 摘要 |
<p>The property of materials in the InP system, whereby helium ion or deuteron bombarded p-type material becomes highly resistive but n-type material remains relatively conductive, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.</p> |
| 申请公布号 |
EP0162860(B1) |
申请公布日期 |
1988.01.27 |
| 申请号 |
EP19840903874 |
申请日期 |
1984.10.18 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
CAPASSO, FEDERICO;FOCHT, MARLIN, WILBERT;MACRANDER, ALBERT, TIEMEN;SCHWARTZ, BERTRAM |
| 分类号 |
H01L21/265;H01L21/266;H01L21/324;H01L21/74;H01L21/76;H01L21/762;H01L21/822;H01L21/8252;H01L27/04;H01L27/15;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
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