| 摘要 |
PURPOSE:To improve the reproducibility by successively forming a thin chalcogenide glass film and a thin metallic film on the surface of a substrate, carrying out exposure and development and transferring a formed pattern of the glass film to the substrate. CONSTITUTION:A thin Se-Ge film 2 and a thin Ag film 3 are successively formed on an n-type InP substrate 1. The film 3 is coated with a positive resist 4 by means of a spinner and a line-and-space pattern 4 of the positive resist is formed. The Ag film 3 is etched with an aqueous nitric acid soln. through the pattern 4 as a mask to form a pattern of the Ag film. After the resist 4 is removed, laser interference exposure is carried out with He-Cd layer and the Ag film 3 is removed with an aqueous nitric acid soln. The Se-Ge film 2 is then developed with an aqueous alkali soln. A, the resulting pattern is transferred to the n-type InP substrate 1 and the substrate 1 is etched with an aqueous alkali soln. B having a higher concn. than the soln. A except parts made slightly soluble in the soln. B by optional doping with Ag. Thus, the reproducibility is easily improved. |
