| 摘要 |
PURPOSE:To obtain the DRAM memory cell having an amplifying function by a method wherein the SOI transistor on an insulating film and the source region of a switching transistor are connected to a bit wire, the drain region of the SOI transistor is connected to a source voltage, and the potential of a word wire and the bit wire are properly controlled. CONSTITUTION:The switching transistor Q1 is an N-channel MOSFET, a polycrystalline silicon electrode 28, which is connected to a drain 24 of the transistor Q1, is formed on the gate electrode 25 of the transistor Q1 through the intermediary of a thin insulating film 27, and the gate electrode 25 is turned into a word wire. A P-channel MOSFET is the SOI transistor Q2 formed on the insulating film, the source 31 of the transistor Q2 is brought to come in contact with the source 23 of the transistor Q1, it forms a P-N junction diode, and it is also connected to a bit wire 34. As the switching transistor of the DRAM memory cell and the transistor for information read out are formed into an overlapped structure as above-mentioned, a memory cell having an amplifying function with the least occupation area can be obtained. |
