| 摘要 |
PURPOSE:To obtain a semiconductor thin-film having high quality by previously decomposing a desired raw material gas, supplying a reaction chamber with the decomposed raw material gas and forming the film onto a disposed into the reaction chamber in the reaction chamber. CONSTITUTION:A raw material gas is decomposed previously through one or two or more of methods in high-frequency plasma discharge, optical irradiation and heating. A raw-material gas decomposition chamber 10 capable of being kept under a predetermined vacuum is arranged under the state in which it is communicated with a raw material gas supply hole 7 for a reaction chamber 1. A film is shaped at a temperature such as a temperature of 150-400 deg.C, at high-frequency power such as high-frequency power of 0.01-1W/cm<2> applied to a high-frequency power supply 6 and at frequency such as frequency of 0.1-100MHz. Accordingly, the amorphous semiconductor thin-film having high quality is acquired. |
