| 摘要 |
PURPOSE:To obtain the oscillation of a more stable single wavelength at a high yield by lessening the effect of the refractive index distribution change of an active layer due to the control of an injection current density distribution. CONSTITUTION:A diffraction grating 2 is formed on an N-type InP substrate 1 and thereafter, an N-type InGaAsP light-guide layer 3, a undoped InGaAsP active layer 4, a P-type InGaAsP antimeltback layer 5 and a P-type InP clad layer 6 are grown in order, mesa stripes 8 are formed and the laminated material is divided into a 1.8-mum wide region I and a 1.5-mum wide region II. Then, a P-type InP current blocking layer 9 and an N-type InP current blocking layer 10 are epitaxially grown excluding the upper parts of the mesa stripes 8 and a P-type InP buried layer 11 and a P<+> InGaAsP contact layer 12 are epitaxially grown on the whole surface, an N-side electrode 13 is formed, a P-side electrode 14 is formed at the part corresponding to the region I on the contact layer 12 and a P side electrode 15 is formed at the part corresponding to the region II. After that, a cleavage is performed in such a way that the boundary between the regions I and II becomes the center, a high-reflectivity multilayered dielectric film 16 is formed on the cleaved end surface on the side of the region I and a low-reflectivity SiN film 17 is formed on the cleaved end surface on the side of the region II. |
