| 摘要 |
PURPOSE:To enable disconnection due to corrosion to be completely suppressed to obtain a high-reliability resin sealed-type semiconductor device, by covering an inner Al electrode, which is easily corroded by invasion of impurities coming from the outside of the sealing resin, with noble metal Ag. CONSTITUTION:An Al wiring pattern is formed on a base insulating film 2 of SiO2 piled on a semiconductor (silicon) substrate 1. The surface of an Al electrode 3, which is one part of the Al wiring pattern, is exposed from a SiO2 protective-insulating film 4, and then an Au ball 5 is stuck on this exposed surface by means of thermal press-bonding of Au conductor. This Al ball 5 is fused by radiating laser light on it so that the Al exposed surface is covered with an Au film 5a. Successively gold-line connection and resin sealing are performed to complete this resin sealed-type semiconductor device. |
