| 摘要 |
PURPOSE:To prevent normal circuits from being deteriorated due to defects of unused transistors, by forming the first wirings of the conductive layers extending along covered regions, and then electrically connecting transistors prescribed on the covered regions with the first wirings, and then forming the second wirings of the conductive layers different from or similar to the first wirings so that the transistors unused on the covered regions are never connected with the first wirings extending along the covered regions. CONSTITUTION:Diagnostic circuit wirings 7A can be connected with gate electrodes 7 of a large number of MISFETQp or Qn on covered regions 6, and extended along the covered regions 6 so as to be formed of the same conductive layers as the gate electrodes 7. The MISFETQp or Qn prescribed on the covered regions 6 are electrically connected with the diagnostic circuit wirings 7A to form wirings 10 of conductive layers different from the diagnostic circuit wirings 7A. Only the parts of MISFETQp or Qn, composing the diagnostic circuits D, are thus connected with the diagnostic circuit wirings 7A so that the MISFETQp or Qn unused on the covered regions 6 are never connected with the diagnostic circuit wirings 7A. |
