| 摘要 |
PURPOSE:To obtain a small electric resistance and a sufficiently large optical forbidden band width of a silicon thin film which is mostly made of silicon atoms and contains at least one type of element among fluorine, chlorine, bromine, iodine and hydrogen by mingling fine crystal particles in an amorphous layer. CONSTITUTION:The silicon thin film of the present invention is a silicon thin film which is mostly made of silicon atoms and contains at least one type of element selected from among fluorine, chlorine, bromine, iodine and hydrogen and an impurity element and the regularity of its atomic arrangement has a specific feature that fine crystal parts are mingled and dispersed in an amorphous layer. When the thin film is manufactured, a system is operated by a main valve 10 and a predetermined pressure is maintained while the degree of vacuum in a vacuum container 9 is being monitored by a vacuum gauge 11. A radio frequency voltage is applied between electrodes 13 and 13' by a radio frequency oscillator 12 to generate a glow discharge. A substrate 15 is placed on a table heated by a heater 14 and is heated to a predetermined temperature by the heater and a doped silicon hydride thin film is formed on the substrate 15. |
