| 摘要 |
PURPOSE:To develop an exposed resist film in a vapor phase by coating a resist consisting of a polymer as a chief material and acetylene deriv. as an additive on a substrate, exposing the desired region thereof and executing a down flow etching method using a gas contg. oxygen. CONSTITUTION:The resist consisting of the polymer (1,4-polybutadiene 1,4- polybutadiyne or the deriv. thereof, etc.) having double or triple bonds at the main chain as the chief material and the acetylene deriv. as the additive is coated on the substrate to form the film of the resist. The desired region of such resist film is exposed by UV light, X-rays or electron beam and the substrate having the exposed resist film is subjected to patterning by executing the down flow etching method using the gas contg. the oxygen. The exposed resist film is thereby developed in the vapor phase. |
