发明名称 FOCUSING-TYPE SEMICONDUCTOR LASER
摘要 PURPOSE:To focus beams at an optional position toward the direction of the junction by preparing a wave front control area at one side end face of a resonator and moreover preparing electrodes which are controllable separately apart from an LD oscillation area. CONSTITUTION:A wave front control area 401 that is formed at a one side end face of outgoing beams is coupled with a gain area of an LD oscillation part 402 and a current non- injection area involves a current injection area by putting the above gain area on a portion of an area that is lacking in gains in the both sides of gain area of the LD oscillation part. Under such a situation, no gains are found in the current non-injection area and what is more, the first clad layer is so thinner than thickness of groove parts that radiation is absorbed by a substrate. Furthermore, a refraction factor in the current injection area is less than that of the current noninjection area because of a plasma effect injected by a carrier. Thus, in the case of the wave front control area, there is a delay in a phase of middle portion of a wave front that is in parallel with the end face of s resonator in the LD oscillation area but the both sides of the wave front, on the contrary, have a more leading phase in comparison with that of the middle part. (to be continued) Thus, electrodes are so divided at the both areas of the LD oscillation and wave front control and can be so controlled separately that a laser makes its beams focus in an optional position.
申请公布号 JPS6315489(A) 申请公布日期 1988.01.22
申请号 JP19860159924 申请日期 1986.07.08
申请人 SEIKO EPSON CORP 发明人 TSUNEKAWA YOSHIFUMI
分类号 H01S5/00;H01S3/00;H01S5/026;H01S5/062 主分类号 H01S5/00
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