THIN FILM TRANSISTOR AND MANUFACTURE THEREOF

摘要

PURPOSE:To obtain a recrystallized film having high uniformity using beam annealing to treat a first thin semiconductor film made into a plurality of stripe- shaped islands. CONSTITUTION:A first semiconductor film 20 of high resistance is formed into plurality of stripes on a substrate 1 and they are selectively etched to a prescribed length (more than a channel length) after treated with beam-annealing in their lengthwise direction. And then n<+> source and drain areas 32 and 31 are provided at the both sides of the plurality of first semiconductor films 20 by depositing and selectively etching a second semiconductor films of low resistance and contact windows 61 and 62 are opened after depositing a gate insulating film 40 and then, a gate electrode 53 and drain and source electrodes 51 and 52 are arranged. Thus, the adoption of channel areas in the form of thin stripes facilitates monocrystallization of a recrystallized layer.