VERFAHREN ZUR HERSTELLUNG VON MIKROSTRUKTUREN UNTERSCHIEDLICHER STRUKTURHOEHE MITTELS ROENTGENTIEFENLITHOGRAPHIE

摘要

The process produces micropatterns with locally varying pattern level from a positive resist material sensitive to X-ray radiation by means of X-ray lithography involving synchrotron radiation using X-ray masks with obsorber structures corresponding to the micropatterns. The object of the invention is to provide a method in a process of the generic type which enables the desired variation in pattern level to be produced in the resist material with only one lithography step. This object is achieved in that only one X-ray mask is used which has, in addition to the patterned absorber layer which absorbs the synchrotron radiation as fully as possible (total absorber layer), at least one further patterned absorber layer which preferably absorbs the synchrotron radiation only in one part of the spectrum (partial absorber layer) and a polymer with a sharp lower limit dose is used as positive resist material.