| 摘要 |
PURPOSE:To form a hard Al2O3 film on a substrate of a metal or the like by reacting Al vapor from an evaporating source with gaseous O2 as a reactive gas in an arc discharge type high vacuum ion plating apparatus. CONSTITUTION:A hard Al2O3 film having >=2000 micro-Knoop hardness is formed on the surface of a substrate such as a steel plate preheated to 500 deg.C by an activated reactive ion plating method using high purity Al as an evaporating source and gaseous O2 as a reactive gas in an arc discharge type high vacuum ion plating apparatus. Conditions during the ion plating include 10kV-500-550mA output of an electron gun, 7-10X10<-5>Torr pressure of gaseous O2, 0.3-0.5kV voltage of the substrate, 40A thermoelectron current and 15-20A ionization current. |
