| 摘要 |
<p>A semiconductor device to which the present invention is adapted consists of a support region (1), an element-forming region (7) and a buried layer (2, 3) therebetween, that are formed in a semiconductor substrate. On the element-forming region (7) is mounted at least either one of the MOS element (11, 12) or the bipolar element (14). The feature of the present invention resides in that element of at least one kind selected from oxygen, nitrogen, carbon, argon, neon, krypton and helium, is contained in at least either one of the element-forming region (7) or the buried layer (2, 3).</p> |
