| 摘要 |
PURPOSE:To eliminate any high temperature processing by a method wherein a semiconductor substrate base and a substrate are firmly fixed by a room temperature setting adhesive layer encircling the connecting parts of projecting electrode of semiconductor base and interconnection conductors on an insulating substrate while the projecting electrodes and the interconnection concuctors are brought into pressure-contact with one another. CONSTITUTION:The peripheral part of an interconnection conductor on an insulating substrate 4 is coated with a room temperature setting adhesive to form an adhesive layer 5. Next, bump electrodes 2 of a semiconductor chip 1 are aligned with connecting electrodes 3 on the interconnection conductor and then the chip 1 is pressed down on the substrate 4 so that the bump electrode 2 may come into contact with the connecting electrodes 3. The adhesive being set at room temperature, the semiconductor element 1 is fixed on the substrate 1 to connect the bump electrodes 2 to the connecting electrode 3 by pressurecontact. Through these procedures, the space between the chip 1 and the substrate 4 is encircled by the adhesive layer 5 to prevent external atmosphere from permeating into the surface of chip 1. |
