| 发明名称 |
PROCESS FOR THE FABRICATION OF A NONVOLATILE MEMORY CELL WITH VERY SMALL THIN OXIDE AREA AND CELL OBTAINED BY SAID PROCESS |
| 摘要 |
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| 申请公布号 |
EP0177986(A3) |
申请公布日期 |
1988.01.20 |
| 申请号 |
EP19850201337 |
申请日期 |
1985.08.21 |
| 申请人 |
SGS MICROELETTRONICA S.P.A. |
发明人 |
RAVAGLIA, ANDREA |
| 分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/28;H01L21/82;H01L29/60;H01L29/78 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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