发明名称 PHOTOELECTRIC SENSOR
摘要 PURPOSE:To catch the change of illuminance as the variation of a resistance value, to improve wavelength sensitivity and to facilitate manufacture by forming a phthalocyanine thin-film or a phthalocyanine-metallic complex thin- film coating a conductive comb-shaped electrode section onto the surface of an insulating substrate with the electrode section. CONSTITUTION:Conductive comb-shaped electrodes 2, 2' are shaped onto an insulating substarte 1, the surfaces of the electrodes 2, 2' are coated with a phthalocyanine thin-film or a phthalocyanine-metallic complex thin-film 3, and leads 5, 5' are fitted to each leading-out electrode section by soldering or silver paste 4, 4'. Since element resistance varies in response to illuminance when such a photoelectric sensor is irradiated with beams of 550-800nm in the photoelectric sensor, illuminance can be measured by measuring element resistance. The group thin-film having wavelength sensitivity can easily be formed by applying a vacuum deposition method, etc. in the photoelectric sensor.
申请公布号 JPS6313381(A) 申请公布日期 1988.01.20
申请号 JP19860156839 申请日期 1986.07.03
申请人 NOK CORP 发明人 OZAKI KAZUYUKI
分类号 H01L51/42;H01L31/08 主分类号 H01L51/42
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