发明名称 |
MANUFACTURE OF FINE STRUCTURE FOR SEMICONDUCTOR CONTACT |
摘要 |
A method for the manufacture of fine structures for semiconductors were in a photographic structuring is carried out on both sides of a smooth, non-stressed metal tape. The tape is etched from both sides. A single sided metal deposition than takes place by means of a float type electroplating. Stabilization of the fine structure is achieved by depositing a lacquer or resin by an electrophoretic deposition or by electro-immersion lacquering. The insulator carrier is applied as one of the final steps of the process. |
申请公布号 |
JPS6313338(A) |
申请公布日期 |
1988.01.20 |
申请号 |
JP19870148892 |
申请日期 |
1987.06.15 |
申请人 |
SIEMENS AG |
发明人 |
ARUFUREETO GUREEBAA;HANSU HADAASUBETSUKU;FURITSUTSU MIYURAA;FUUBERUTO TSUKIIRU;HANSU YURUGEN HATSUKE |
分类号 |
H01L21/60;H01L21/48;H01L23/495;H05K3/06;H05K3/20 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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