发明名称 MANUFACTURE OF FINE STRUCTURE FOR SEMICONDUCTOR CONTACT
摘要 A method for the manufacture of fine structures for semiconductors were in a photographic structuring is carried out on both sides of a smooth, non-stressed metal tape. The tape is etched from both sides. A single sided metal deposition than takes place by means of a float type electroplating. Stabilization of the fine structure is achieved by depositing a lacquer or resin by an electrophoretic deposition or by electro-immersion lacquering. The insulator carrier is applied as one of the final steps of the process.
申请公布号 JPS6313338(A) 申请公布日期 1988.01.20
申请号 JP19870148892 申请日期 1987.06.15
申请人 SIEMENS AG 发明人 ARUFUREETO GUREEBAA;HANSU HADAASUBETSUKU;FURITSUTSU MIYURAA;FUUBERUTO TSUKIIRU;HANSU YURUGEN HATSUKE
分类号 H01L21/60;H01L21/48;H01L23/495;H05K3/06;H05K3/20 主分类号 H01L21/60
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