发明名称 |
A VLSI self-aligned bipolar transistor. |
摘要 |
<p>A self-aligned bipolar transistor in which an emitter polysilicon is used to align both an extrinsic base region and a deep collector contact. The diffused extrinsic base is separated from the diffused emitter region by an oxide sidewall segment. Doping of the extrinsic base and the mitter is achieved by diffusion from doped overlying polysilicon layers. The resultant structure is size limited primarily by the metal pitch of the leads.</p> |
申请公布号 |
EP0253538(A2) |
申请公布日期 |
1988.01.20 |
申请号 |
EP19870305812 |
申请日期 |
1987.07.01 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BRIGHTON, JEFFREY E. |
分类号 |
H01L29/73;H01L21/331;H01L29/732 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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